Sanyo Electric J421
P-Channel Silicon MOSFET
| Part No. | J421 |
|---|---|
| Datasheet | J421 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
● Low ON resistance.● Ultrahigh-speed switching.
● 4V drive. P-Channel Silicon MOSFET 2SJ421 Ultrahigh-Speed Switching
APPLICATIONS
Package Dimensions unit:mm 2116 [2SJ421] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 0.595 1.27 0.43 Conditions PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2× 0.8mm)ELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–5A ID=–5A, VGS=–10V ID=–2A, VGS=–4V 1 : Source 2...
