J421
Features
- Low ON resistance.
- Ultrahigh-speed switching.
- 4V drive.
P-Channel Silicon MOSFET
2SJ421
Ultrahigh-Speed Switching Applications
Package Dimensions unit:mm 2116
[2SJ421] 85
0.1 1.5 1.8max 4.4 0.3 6.0
1 5.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
0.595 1.27 0.43
Conditions
PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2× 0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) | yfs |
RDS(on)1 RDS(on)2
ID=- 1m A, VGS=0 VDS=- 30V, VGS=0 VGS=±16V, VDS=0 VDS=- 10V, ID=- 1m A VDS=- 10V, ID=- 5A ID=- 5A, VGS=- 10V ID=- 2A, VGS=-...
