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J659 - P-Channel Silicon MOSFET

Features

  • General-Purpose Switching Device.

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Part Number Description Manufacturer
J652 2SJ652 Sanyo Semicon Device

Other Datasheets by SANYO (now Panasonic)

Part Number Description
J654 P-Channl Silicon MOSFET

Full PDF Text Transcription

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Ordering number : EN8584 2SJ659 P-Channel Silicon MOSFET 2SJ659 Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --14 --56 1.
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