Click to expand full text
Ordering number:EN3567
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon MOSFET
2SK1429
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2052C
[2SK1429]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.