Datasheet4U Logo Datasheet4U.com

K1453 - 2SK1453

Features

  • Low ON-state resistance.
  • Ultrahigh-speed switching.
  • Converters.
  • Micaless package facilitating mounting. Package Dimensions unit:mm 2076B 16.0 3.4 [2SK1453] 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 1.0 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tst.

📥 Download Datasheet

Datasheet preview – K1453

Datasheet Details

Part number K1453
Manufacturer Sanyo
File Size 108.52 KB
Description 2SK1453
Datasheet download datasheet K1453 Datasheet
Additional preview pages of the K1453 datasheet.

📁 Similar Datasheet

  • K1450 - 2SK1450 (Sanyo Semiconductor)
  • K1457 - 2SK1457 (Sanyo Semicon Device)
  • K1458 - 2SK1458 (Sanyo Semicon Device)
  • K1459 - 2SK1459 (Sanyo Semicon Device)
  • K140 - Silicon bilateral voltage triggered switch (Ceramate)
  • K1400A - 5V Crystal Clock Oscillators (Champion)
  • K1400G - Sidac (JIEJIE)
  • K1400G - Axial Leaded Silicon Bilateral Voltage Triggered Diode (Sunmate)
  • K1400S - Sidac (JIEJIE)
  • K1400y - Thyristors (Littelfuse)
Other Datasheets by Sanyo

Full PDF Text Transcription

Click to expand full text
Ordering number:EN3456 N-Channel Silicon MOSFET 2SK1453 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting. Package Dimensions unit:mm 2076B 16.0 3.4 [2SK1453] 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 1.0 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 5.
Published: |