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K1726 - 2SK1726

Key Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • Low-voltage drive. N-Channel Silicon MOSFET 2SK1726 Ultrahigh-Speed Switching.

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Full PDF Text Transcription for K1726 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K1726. For precise diagrams, and layout, please refer to the original PDF.

Ordering number:EN3821 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK1726 Ultrahigh-Speed Switching Applicat...

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e. N-Channel Silicon MOSFET 2SK1726 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK1726] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Mounted on a ceramic board (250mm2×0.

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