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K223 - 2SK223

Key Features

  • Ultrahigh withstand voltage (VGDS≥.
  • 80V).
  • Due to low gate leakage currents even at high voltage, the 2SK223 is suitable for a wide range of.

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Ordering number:EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features · Ultrahigh withstand voltage (VGDS≥–80V). · Due to low gate leakage currents even at high voltage, the 2SK223 is suitable for a wide range of application (IGDL=1nA/VDS=50V, ID=1mA). · High yfs(yfs=20mS/VDS=30V, f=1kHz). Package Dimensions unit:mm 2019B [2SK223] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG PD Tj Tstg Electrical Characteristics at Ta = 25˚C 1.