K2919 - 2SK2919

SANYO (now Panasonic)

Key Features

Low ON resistance.
Ultrahigh-speed switching.
On-chip high-speed diode (trr=100ns). Package Dimensions unit:mm 2128 [2SK2919] 8.2 7.8 6.2 3 0.6 4.2 0.4 0.2 1.2 8.4 10.0 0.7 12 1.0 1.0 2.54 2.54 5.08 10.0 6.0 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=.

K2919 2sk2919 by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	K2919
Manufacturer	SANYO (now Panasonic)
File Size	100.29 KB
Description	2SK2919
Datasheet	K2919 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
K2915	2SK2915	Toshiba Semiconductor
K2917	2SK2917	Toshiba Semiconductor
K2900-01	N-channel MOS-FET	Fuji Electric
K2902-01MR	2SK2902-01MR	Fuji Electric
K2925	Silicon N-Channel MOSFET	Hitachi

Other Datasheets by SANYO (now Panasonic)

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Ordering number:ENN6121 N-Channel Silicon MOSFET 2SK2919 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · On-chip high-speed diode (trr=100ns). Package Dimensions unit:mm 2128 [2SK2919] 8.2 7.8 6.2 3 0.6 4.2 0.4 0.2 1.2 8.4 10.0 0.7 12 1.0 1.0 2.54 2.54 5.08 10.0 6.0 2.