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K4123LS - 2SK4123LS

Key Features

  • Low ON-resistance, low input capacitance, ultrahigh-speed switching.
  • Adoption of high reliability HVP process.
  • Attachment workability is good by Mica-less package.
  • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse).
  • 3 Avalan.

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K4101LS 2SK4101LS
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Full PDF Text Transcription (Reference)

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www.DataSheet.co.kr Ordering number : ENA0826 2SK4123LS SANYO Semiconductors DATA SHEET 2SK4123LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.