LC33832ML-10 Description
By using memory cells each posed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use with high density, high speed, and low power dissipation. The LC33832 series can easily acplish auto-refresh and self-refresh by means of OE/RFSH input. As with asynchronous static RAM, WE input uses a system for incorporating input data at the WE rise, thereby facilitating...
LC33832ML-10 Key Features
- CE access time/OE access time/Cycle time/Current drain
- High-level input of VIN = 6.5 V to VIH (min) L
- Low-level input of VIN = VIL (max) to -1.0 V X
- High- or low-level input NP
- Negative-polarity pulse input VX