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LC3564BM Datasheet 64K (8192-word 8-bit) SRAM

Manufacturer: SANYO (now Panasonic)

Overview

Ordering number : EN5804A CMOS IC LC3564B, BS, BM, BT-70/10 64K (8192-word × 8-bit) SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs.

These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current.

These SRAMs provide three control signal inputs: an OE input for high-speed memory access, and two chip enable lines, CE1 and CE2, for low power mode and device selection.

Key Features

  • Supply voltage range: 2.7 to 5.5 V.
  • In 5-V operation mode: 5.0 V ±10%.
  • In 3-V operation mode: 3.0 V ±10%.
  • Address access time (tAA).
  • In 5-V operation mode: LC3564B, BS, BM, and BT-70: 70 ns (max) LC3564B, BS, BM, and BT-10: 100 ns (max).
  • In 3-V operation mode: LC3564B, BS, BM, and BT-70: 200 ns (max) LC3564B, BS, BM, and BT-10: 500 ns (max).
  • Ultralow standby current.
  • In 5-V operation mode: 1.0 µA (Ta ≤ 70°C), 3.0 µA (Ta ≤ 8.