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LC3564RT-10LV Datasheet 64K (8192 words x 8 bits) SRAM

Manufacturer: SANYO (now Panasonic)

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Overview

Ordering number: EN 4484B CMOS LSI LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM Overview The LC3564RM,RT are 8192-word × 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery-operated equipment.

They are fully CMOS devices employing 2-layer A1 wiring to realize high-speed access, low operating current consumption and very low standby current.

They incorporate control signal inputs; OE for high-speed memory access, and 2 chip enables CE1 and CE2 for power-down and device selection.

Key Features

  • s Supply voltage range: 2.0 to 3.6V.
  • 3V operation: 2.7 to 3.6V.
  • Battery operation: 2.0 to 2.4V s High-speed access time.
  • 3V operation - LC3564RM,RT-10LV: 100ns (max) - LC3564RM,RT-12LV: 120ns (max) - LC3564RM,RT-15LV: 150ns (max).
  • Battery operation - LC3564RM,RT-10LV: 200ns (max) - LC3564RM,RT-12LV: 250ns (max) - LC3564RM,RT-15LV: 300ns (max) unit: mm 3221 - TSOP28 [LC3564RT] s Very-low standby current.
  • 3V operation - Ta ≤ 70°C: 1.0µA - Ta ≤ 85°.

More Datasheets from SANYO (now Panasonic)

Part Number Description
LC3564RT-12LV 64K (8192 words x 8 bits) SRAM
LC3564RT-15LV 64K (8192 words x 8 bits) SRAM
LC3564RM 64K (8192 words x 8 bits) SRAM
LC3564B 64K (8192-word 8-bit) SRAM
LC3564BM 64K (8192-word 8-bit) SRAM
LC3564BS 64K (8192-word 8-bit) SRAM
LC3564BT 64K (8192-word 8-bit) SRAM
LC3564BT-10 64K (8192-word 8-bit) SRAM
LC3564BT-70 64K (8192-word 8-bit) SRAM
LC3564S 64K (8192 words x 8 bits) SRAM