LC35W256ET-10W Description
ENN6304 CMOS IC LC35W256EM, ET-10W 256K (32K words × 8 bits) SRAM Control pins: OE and CE Overview The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell,.
LC35W256ET-10W Key Features
- Supply voltage range: 2.7 to 3.6 V
- Access time: 100 ns (maximum)
- Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C)
- Operating temperature: -10 to +70°C
- Data retention voltage: 2.0 to 3.6 V
- All I/O levels: CMOS patible (0.8 VCC, 0.2 VCC)
- Input/output shared function pins, 3-state output pins
- No clock required (fully static circuits)