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LE28DW3212AT-80B - 32 Megabit FlashBank Memory

General Description

The LE28DW3212AT consists of two memory banks, 2 each contains of 1024K x 16 bits or 2048K x 8 sector mode flash EEPROM manufactured with SANYO's proprietary, high performance FlashTechnology.

The LE28DW3212AT writes with a 3.0-volt-only power supply.

Key Features

  • 1 Sp ec ifi ca tio ns.
  • Single 3.0-Volt Read and Write Operations.
  • Separate Memory Banks by Address Space.
  • Bank1: 16Mbit (1024K x 16 / 2048K x 8) Flash.
  • Bank2: 16Mbit (1024K x 16 / 2048K x 8) Flash.
  • Simultaneous Read and Write Capability Read Access Time.
  • 80 ns Latched Address and Data End of Write Detection.
  • Toggle Bit / Data # Polling / RY/BY# Write.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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32 Megabit FlashBank Memory LE28DW3212AT-80B FEATURES: 1 Sp ec ifi ca tio ns • • • • • • • • • Single 3.