LE28DW3212AT-80B Description
The LE28DW3212AT consists of two memory banks, 2 each contains of 1024K x 16 bits or 2048K x 8 sector mode flash EEPROM manufactured with SANYO's proprietary, high performance FlashTechnology. The LE28DW3212AT writes with a 3.0-volt-only power supply. The LE28DW3212AT is divided into two separate memory banks.
LE28DW3212AT-80B Key Features
- Single 3.0-Volt Read and Write Operations
- Separate Memory Banks by Address Space
- Bank1: 16Mbit (1024K x 16 / 2048K x 8) Flash
- Bank2: 16Mbit (1024K x 16 / 2048K x 8) Flash
- Simultaneous Read and Write Capability
- 80 ns Latched Address and Data End of Write Detection
- Toggle Bit / Data # Polling / RY/BY# Write Protection by WP# pin Flash Bank: Two Small Erase Element Sizes
- 2K Words per Sector or 32K Words per Block
- Erase either element before Word Program CMOS I/O patibility Packages Available
- 48-Pin TSOP (12mm x 20mm) Continuous Hardware and Software Data Protection (SDP)