MCH3109
Features
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Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (0.85mm). High allowable power dissipation.
0.3 3
0.65 2.0
(Bottom view)
1 : Base 2 : Emitter 3 : Collector
Specifications ( ) : MCH3109
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board(600mm2!0.8mm) Conditions
(Top view)
SANYO : MCPH3
Unit (--30)40 (--)30 (--)5 (--)3 (--)5 (--)600 0.8 150 --55 to +150 V V V A A m A W °C °C
Ratings
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product...
