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MCH3312 - Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions unit : mm 2167A [MCH3312] 0.25 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.3 0.15 3 2.1 1.6 0.25 0.65 2.0 0.07 2 1 3 0.85 1 : Gate 2 : Source 3 : Drain 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cy.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7009 MCH3312 P-Channel Silicon MOSFET MCH3312 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2167A [MCH3312] 0.25 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.3 0.15 3 2.1 1.6 0.25 0.65 2.0 0.07 2 1 3 0.85 1 : Gate 2 : Source 3 : Drain 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.