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MCH3382 - P-Channel Silicon MOSFET

Key Features

  • ON-resistance RDS(on)1=152mΩ (typ. ).
  • 1.2V drive.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Storage Temperature Tstg This product is designed to “ESD immunity < 200V.

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Ordering number : ENA1766 MCH3382 SANYO Semiconductors DATA SHEET MCH3382 P-Channel Silicon MOSFET Low Votage Drive Switching Device Applications Features • ON-resistance RDS(on)1=152mΩ (typ.) • 1.2V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings --12 ±9 --2 --8 0.8 150 --55 to +150 Unit V V A A W °C °C 2.1 1.6 0.