Sanyo Electric MCH5809
N-Channel Silicon MOSFET
| Part No. | MCH5809 |
|---|---|
| Datasheet | MCH5809 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3443) and a Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [MOSFET]● Low ON-resistance.
● Ultrahigh-speed switching.
● 2.5V drive. [SBD]
● Short reverse recovery time.
● Low forward voltage. 0.25 2.1 1.6 0.25 [MCH5809] 0.3 0.15 4 5 0.65 2.0 (Bottom view) 0.07 3 2 1 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 0.85 1 2 3 (Top view) Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 0.5 3 --55 to +125 --55 to +125 V V...
