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MCH5837 - N-Channel Silicon MOSFET

Features

  • Composite type with an N-channel silicon MOSFET and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting.
  • [MOSFET].
  • Low ON-resistance.
  • 1.8V drive.
  • [SBD].
  • Short reverse recovery time.
  • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipati.

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Datasheet Details

Part number MCH5837
Manufacturer SANYO
File Size 61.12 KB
Description N-Channel Silicon MOSFET
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Full PDF Text Transcription

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Ordering number : ENA0781A MCH5837 SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • 1.8V drive. • [SBD] • Short reverse recovery time. • Low forward voltage.
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