MCH6421 Datasheet PDF

FEATURES

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● N-Channel Silicon MOSFET General-Purpose Switching Device

APPLICATIONS

Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2✕0.8mm) Conditions Ratings 20 ±12 5.5 22 1.5 150 --55 to +150 Unit V V A A W °C °C

ELECTRICAL CHARACTERISTICS

at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=4.5V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V 0.4 2.0 3.8 29 43 69 38 61 99 Ratings min 20 1 ±10 1.3 typ max Unit V μA μA V S mΩ mΩ mΩ Marking : KV Continued on next page.