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Ordering number : ENN7013
MCH6616
N-Channel Silicon MOSFET
MCH6616
Ultrahigh-Speed Switching Applications
Features
• • • •
Package Dimensions
Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
0.25
[MCH6616]
0.3 0.15
4
2.1 1.6
5
6
0.25
3 2 0.65
2.0
0.07
1
6
5
4
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm 2!0.