SCH1301
Features
- Low ON-resistance.
- Ultrahigh-speed switching.
- 1.8V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)
Ratings --12 ±8 --2.4 --9.6 0.8 150
--55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : JA
V(BR)DSS
IDSS
IGSS VGS(off)
yfs RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4
Ciss Coss Crss
ID=--1m A, VGS=0V VDS=--4V,...
