SCH2830 Description
ENA0861 SCH2830 SANYO Semiconductors DATA SHEET SCH2830 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications.
SCH2830 Key Features
- posite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-dens
- [MOSFET]
- Low ON-resistance
- Ultrahigh-speed switching
- 1.8V drive
- Short reverse recovery time
- Low forward voltage