SCH2830 - P-Channel Silicon MOSFET

Datasheet Summary

Features

Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.
[MOSFET].
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
[SBD].
Short reverse recovery time.
Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse).

Sanyo

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Datasheet Details

Part number	SCH2830
Manufacturer	Sanyo
File Size	59.84 KB
Description	P-Channel Silicon MOSFET
Datasheet	SCH2830 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA0861 SCH2830 SANYO Semiconductors DATA SHEET SCH2830 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. • [SBD] • Short reverse recovery time. • Low forward voltage.

Published: Jan 11, 2016 |