SCH2830
Features
- posite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.
- [MOSFET]
- Low ON-resistance.
- Ultrahigh-speed switching.
- 1.8V drive.
- [SBD]
- Short reverse recovery time.
- Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage
Symbol
VDSS VGSS
ID IDP PD Tch Tstg
VRRM VRSM
Average Output Current
Marking : XF
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit
Mounted on a ceramic board (900mm2✕0.8mm) Mounted in Cu-foiled area of 0.72mm2✕0.03mm on glass epoxy board
Ratings
Unit
--20 ±10
--1 --4 0.6 150 --55 to +125
V V A A W °C °C
30 V 30 V 0.7 A
0.5 A
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