Sanyo Electric SMP3003
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
| Part No. | SMP3003 |
|---|---|
| Datasheet | SMP3003 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| Buy | Stock & Price |
FEATURES
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● P-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
Low ON-resistance. 4V drive. Avalanche resistance guarantee. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --75 ±20 --100 --400 90 150 --55 to +150 468 --60 Unit V V A A W °C °C mJ A Note : *1 VDD=--48V, L=100μH, IAV=--60A *2 L≤100μH, Single pulseELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=--1mA, VGS=0V VDS=--75V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA --1.2 Ratings min --75 --10 ±10 --2.6 typ max Unit V μA μA V Marking : MP3003 Continued on next page.
