Sanyo Electric SVC276
Diffused Junction Type Silicon Diode
APPLICATIONS
FEATURES
● Package Dimensions unit : mm 1326 [SVC276] 0.25●
●
● Twin type with a good linearity of C-V characteristic. Excels in large input characteristic. Small package permits SVC276-applied sets to be compact and slim. High capacitance ratio (VR=2.0 to 8.0V). High Quality Factor. 0.3 3 0.15 2.1 Electrical Connection 0.25 1.6 2 0.65 2.0 1 3 0.07 (Top view) 1 2 0.85 1 : Anode 2 : Anode 3 : Cathode (Bottom view) 3 1 : Anode 2 : Anodet 3 : Cathode 1 2 (Top view) SANYO : MCPH3 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Reverse Voltage Junction Temperature Storage Temperature Symbol VR Tj Tstg Conditions Ratings 16 125 --55 to +125 Unit V °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Breakdown Voltage Reverse Voltage Interterminal Capacitance* Quality Factor Capacitance Ratio Symbol V(BR)R IR C2.0V C6.0V C8.0V Q CR IR=10µA VR=10V VR=2.0V, f=1MHz VR=6.0V, f=1MHz VR=8.0V, f=1MHz VR=2.0V, f=100MHz C2.0V / C8.0V Conditions Ratings min 14 50 73.72 25.50 18.04 100 3.1 79.77 33.61 23.78 typ max Unit V nA pF pF pF Note)* : Capacitance value per each diode.