Sanyo Electric TF250TH
The TF250TH is classified by IDSS as follows : (unit : µA) Continued on next page.| Part No. | TF250TH |
|---|---|
| Datasheet | TF250TH Download |
| Manufacturer |  Sanyo Electric |
| Description | N-channel Silicon Junction FET |
| Buy | Stock & Price |
FEATURES
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● N-channel Silicon Junction FET Electret Condenser Microphone
APPLICATIONS
Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS yfs Ciss Crss Conditions IG=-100µA VDS=2V, ID=1µA VDS=2V, VGS=0V VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz VDS=2V, VGS=0V, f=1MHz R...
