Sanyo Electric TF256TH
The TF256TH is classified by IDSS as follows : (unit : μA) Marking Rank IDSS N3 3 100 to 180 N4 4 140 to 280 N5 5 240 to 450 Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 5pF 2.2kΩ VCC=2.0V VCC=1.5V 33μF + VTVM V OSC THD 400 350 ID -- VDS V GS=0V Drain Current, ID -- μA 500 450 400 350 300 250 200 150 100 ID -- VGS VDS=2V Drain Current, ID -- μA 300 250 200 --0.05V 100 50 0 --0.15V --0.20V --0.25V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 30 0μ A ID S 150 S= 45 --0.10V 0μ A 15 0μ A A 0μ 0 --0.30V 4.5 5.0 50 0 --0.50 --0.45 --0.40 --0.35 --0.30 --0.25...| Part No. | TF256TH |
|---|---|
| Datasheet | TF256TH Download |
| Manufacturer |  Sanyo Electric |
| Description | N-channel Silicon Junction FET |
| Buy | Stock & Price |
FEATURES
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● N-channel Silicon Juncton FET Electret Condenser Microphone
APPLICATIONS
High gain : GV=2.7dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products Best suited for use in electret condenser microphone for audio equipments and telephones Excellent transient characteristics Adoption of FBET process Halogen free compliance SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Package Dimensions unit : mm (typ) 7031-001 Top View 1.4 0.2 0.25 3 1.2 0.8 Product & Package Information● Package : VTFP
● JEITA, JEDEC : SC-106A
● Minimum Packing Quantity : 8,000 pcs./real Packing Type: TL Marking 3 Rank 1 0.2 2 0.2 0.45 0.34 0.1 N TL 1 2 Electrical Connection 1 Bot t om View 0.07 1 : Drain 2 : Source 3 : Gate SANYO : VTFP 3 0.07 2 10511 TKIM TC-00002535/N2509GB TKIM TC-00002097 No.
