Sanyo Electric TIG030TS
N-Channel IGBT Light-Controlling Flash Applications
| Part No. | TIG030TS |
|---|---|
| Datasheet | TIG030TS Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel IGBT Light-Controlling Flash Applications |
| Buy | Stock & Price |
FEATURES
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● N-Channel IGBT Light-Controlling Flash
APPLICATIONS
Low-saturation voltage. 4V drive. Enhansment type. Built-in gate-to-emitter protection diode. Mounting height 1.1mm, mounting area 19.2mm2. dv / dt guarantee.* SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP dVCE / dt Tch Tstg PW≤1ms PW≤500µs, duty cycle≤0.5%, CM=400µF VCE≤320V, starting Tch=25°C Conditions Ratings 400 ±6 ±8 150 400 150 --40 to +150 Unit V V V A V / µs °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Symbol V(BR)CES ICES IGES Conditions IC=2mA, VGE=0V VCE=320V, VGE=0V VGE=±6V, VCE=0V Ratings min 400 10 ±10 typ max Unit V µA µA Marking : G030 Continued on next page. * : Conduct 100% screening of dv / dt (slope of collector voltage at the time of turn-off) by dv / dt>400V/µs.
