TS788 Datasheet PDF | Sanyo Electric

Sanyo Electric TS788

TS788 is possible to make applied sets smaller and Slimmer. Absolute Maximum Ratings / Ta=25°C Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature VGDO IG ID PD Tj Tstg --20 10 1 100 150 --55to+150 min --20 --0.2 140g 0.4 unit V mA mA mW °C °C typ --0.6 1.2 4.1 0.88 max --1.5 500g unit V V µA...

Part No.	TS788
Datasheet	TS788 Download
Manufacturer	Sanyo Electric
Description	N- channel Junction FET Electret Condenser Microphone
Buy	Stock & Price

FEATURES

● Especially suited for use in electret condenser microphone.
●
● Excellent voltage characteristics.
● Excellent transient characteristics.
● Adoption of FBET process.

ABSOLUTE MAXIMUM RATINGS

/ Ta=25°C Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature VGDO IG ID PD Tj Tstg --20 10 1 100 150 --55to+150 min --20 --0.2 140g 0.4 unit V mA mA mW °C °C typ --0.6 1.2 4.1 0.88 max --1.5 500g unit V V µA mS pF pF

ELECTRICAL CHARACTERISTICS

/ Ta=25°C G-D Breakdown Voltage V( BR)GDO IG =--100µA VGS(off) VDS=5V, ID=1µA Cutoff Voltage IDSS VDS=5V, VGS=0 Drain Current | Yfs | VDS=5V, VGS=0, f=1kHz Forward Transfer Admittance Ciss VDS=5V, VGS=0, f=1MHz Input Capacitance VDS=5V, VGS=0, f=1MHz Crss Reverce Transfer Capacitance g : The TS788 is classified by IDSS as follows : (unit : µA) Marking IDSS E4 140 to 240 E5 210 to 350 E6 320 to 500 [Ta=25°C, VCC=4.5V, RL=1kΩ, CIN=15pF, See specified Test Circuit.] Voltage Gain Reduce...