UD0506T Datasheet PDF

FEATURES

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● Diffused Junction Silicon Diode Low VF Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low noise at the time of reverse recovery. Low forward voltage (VF max=1.3V). Halogen free compliance. Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 600 5 Sine wave 10ms 40 150 --55 to +150 Unit V A A °C °C IO IFSM Tj Tstg

ELECTRICAL CHARACTERISTICS

at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr1 trr2 Rth(j-c) IR=1mA IF=5A VR=600V IF=5A, di / dt=100A/μs IF=0.5A, IR=1A Junction -Case 120 53 6 Conditions Ratings min 600 1.1 1.3 10 150 typ max Unit V V μA ns ns °C / W Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.).