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VEC2307 Datasheet PDF

Sanyo Electric VEC2307

P-Channel Silicon MOSFET General-Purpose Switching Device

Part No. VEC2307
Datasheet VEC2307 Download
Manufacturer
Sanyo Electric
Description P-Channel Silicon MOSFET General-Purpose Switching Device
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VEC2307 datasheet page 1 preview

FEATURES

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● P-Channel Silicon MOSFET General-Purpose Switching Device

APPLICATIONS

The best suited for load switches. 4V drive. Composite type, facilitaing high-density mounting. Mount height 0.75mm. Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --30 ±20 --2 --8 0.9 1.0 150 --55 to +150 Unit V V A A W W °C °C

ELECTRICAL CHARACTERISTICS

at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VG...
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