Sanyo Electric VEC2601
N-Channel and P-Channel Silicon MOSFETs
| Part No. | VEC2601 |
|---|---|
| Datasheet | VEC2601 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel and P-Channel Silicon MOSFETs |
| Buy | Stock & Price |
FEATURES
● N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching DeviceAPPLICATIONS
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● A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting. Best suited for load switches. 2.5V drive. 0.75mm mount high. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit Conditions N-channel 30 ±10 0.15 0.6 0.9 150 --55 to +150 P-channel -20 ±10 --3 -12 Unit V V A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=3...
