Sanyo Electric VEC2801
P-Channel Silicon MOSFET / Schottky Barrier Diode
| Part No. | VEC2801 |
|---|---|
| Datasheet | VEC2801 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET / Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
●● MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
APPLICATIONS
The best suited for DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET]● Low ON-resistance.
● 1.8V drive. [SBD]
● Short reverse recovery time.
● Low forward voltage. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit --12 ±...
