Sanyo Electric VEC2819
P-Channel Silicon MOSFET / Schottky Barrier Diode
| Part No. | VEC2819 |
|---|---|
| Datasheet | VEC2819 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET / Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
●● MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
APPLICATIONS
DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET]● Low ON-resistance
● Ultrahigh-speed switching.
● 1.8V drive. [SBD]
● Low switching noise.
● Low leakage current and high reliability due to planar structure. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage VRRM VRSM 30 30 V V VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2✕0.8mm) 1unit --20 ±10 --3.5 --14 1.0 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : CT Continued on next page. A...
