Sanyo Electric VEC2820
N-Channel Silicon MOSFET / Schottky Barrier Diode
| Part No. | VEC2820 |
|---|---|
| Datasheet | VEC2820 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel Silicon MOSFET / Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching DeviceAPPLICATIONS
●● Composite type with an N-channel sillicon MOSFET and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting. [MOSFET]
● Low ON-resistance.
● 1.8V drive. [SBD]
● Short reverse recovery time.
● Low forward voltage. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit 20 ±10 3 12 0.9 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : CU Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.).
