Datasheet Summary
Ordering number:EN659K
N-Channel Junction Silicon FET
High Voltage Driver Applications
Features
- Ultrahigh withstand voltage (VGDS≥- 80V).
- Due to low gate leakage currents even at high voltage, the 2SK223 is suitable for a wide range of application (IGDL=1nA/VDS=50V, ID=1mA).
- High yfs(yfs=20mS/VDS=30V, f=1kHz).
Package Dimensions unit:mm
2019B
[2SK223]
5.0 4.0
0.6 2.0 14.0 5.0
0.45 0.5
Specifications...
