Datasheet Summary
Ordering number:EN550F
NPN Epitaxial Planar Silicon Transistor
2SD879
1.5V, 3V Strobe Applications
Features
- In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.
- The charge time is approximately 1 second faster than that of germanium transistors.
- Less power dissipation because of low Collector-toEmitter Voltage VCE(sat), permitting more flashes of light to be emitted.
- Small package and large allowable collector dissipation (TO-92, PC=750mW).
- Large current capacity and highly resistant to breakdown.
- Excellent linearity of hFE in the region from low current to high current.
Specifications
Package Dimensions unit:mm 2003B
[2SD879]
5.0...