Datasheet Summary
Ordering number:EN3324
NPN Epitaxial Planar Silicon posite Transistor
Low-Frequency General-Purpose Amp, General Driver Applications
Features
- posite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
- The FC139 is formed with two chips, being equivalent to the 2SC3689, placed in one package.
- Adoption of FBET process.
- High DC current gain (hFE=800 to 3200).
- High VEBO (VEBO≥15V)
- Excellent in thermal equilibrium and pair capability. Electrical Connection
Package Dimensions unit:mm 2067
[FC139]
E1:Emitter 1 B1:Base 1 C2:Collector 2 E2:Emitter 2 B2:Base 2 C1:Collector 1 SANYO:CP6
Specifications
Absolute...