Datasheet Summary
Ordering number:EN3964
PNP Epitaxial Planar Silicon posite Transistor
Low-Frequency General-Purpose Amp, Driver Applications
Features
- posite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
- The FC149 is formed with two chips, being equivalent to the 2SA1813, placed in one package.
- Adoption of FBET process.
- High DC current gain (hFE=500 to 1200).
- High VEBO (VEBO≥15V).
- Excellent in thermal equilibrium and pair capability. Electrical Connection
Package Dimensions unit:mm 2067A
[FC149]
1:Emitter 1 2:Base 1 3:Collector 2 4:Emitter 2 5:Base 2 6:Collector 1 SANYO:CP6
Specifications...