Datasheet Summary
Ordering number:EN4888
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
- posite type posed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive.
- Facilitates high-density mounting.
- The FX605 is formed with two chips, each being equivalent to the 2SJ190, placed in one package.
- Matched pair characteristics.
Package Dimensions unit:mm 2120
[FX605]
1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 SANYO:XP6 (Bottom view)
Switching Time Test CIrcuit
Electrical Connection
1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 (Top view)
Specifications...