Datasheet Details
| Part number | 2N3055 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 147.41 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2N3055-SavantIC.pdf |
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Overview: SavantIC Semiconductor Silicon NPN Power Transistors Product.
| Part number | 2N3055 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 147.41 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2N3055-SavantIC.pdf |
|
|
|
·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplifier applications.
PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 100 60 7 15 7 115 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case VALUE 1.52 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2N3055 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCER Collector-emitter sustaining voltage IC=0.2A ;RBE=100A VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4A VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=3.3A VBE Base-emitter on voltage IC=4A ;
VCE=4V ICEO Collector cut-off current ICEX Collector cut-off current IEBO Emitter cut-off current VCE=30V;
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2N3055 | COMPLEMENTARY SILICON POWER TRANSISTORS | STMicroelectronics |
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2N3055 | NPN Power Silicon Transistor | VPT |
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2N3055 | NPN Power Transistor | TAITRON |
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