2N3445 Description
·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N3445 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 80 V VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO Collector-emitter saturation voltage IC=3A;.