2N5050
2N5050 is Silicon NPN Power Transistors manufactured by SavantIC.
DESCRIPTION
- With TO-66 package
- High breakdown voltage
- Excellent safe operating area APPLICATIONS
- Designed for driver circuits,switching and amplifier applications
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N5050 2N5051 2N5052
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2N5050 VCBO Collector-base voltage 2N5051 2N5052 2N5050 VCEO Collector-emitter voltage 2N5051 2N5052 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 125 150 200 125 150 200 7 2 40 150 -65~200 V A W V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 7.0 UNIT /W
Savant IC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5050 VCEO(SUS) Collector-emitter sustaining voltage 2N5051 2N5052 VCEsat VBEsat VBE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N4910 ICEO Collector cut-off current 2N4911 2N4912 ICBO IEBO h FE f T Collector cut-off current Emitter cut-off current DC current gain Transition frequency IC=2A; IB=0.5A IC=2A; IB=0.5A IC=750m A ; VCE=5V VCE=125V; IB=0 VCE=150V; IB=0 VCE=200V; IB=0 IC=0.1A ;IB=0
2N5050 2N5051 2N5052
SYMBOL
CONDITIONS
MIN 125 150 200
TYP.
UNIT
1.2 1.5 1.2
5.0 m A
VCB=Rated VCBO; IE=0 VEB=7V; IC=0 IC=750m A ; VCE=5V IC=500m A;VCE=10V;f=1MHz 25 10
0.1 1.0 100 m A m A
MHz
Savant IC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5050 2N5051 2N5052
Fig.2 outline...
