2N5239 Datasheet | SavantIC

Savant IC Semiconductor .. Product Specification Silicon NPN Power Transistors DESCRIPTION - With TO-3 package - High breakdown voltage - High power dissipation APPLICATIONS - Switching regulator - Inverters - Power amplifiers - Deflection circuits - High-voltage bridge amplifiers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE 300 225 6 5 2 100 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.75 UNIT /W Savant IC Semiconductor .. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=0.2A ; IB=0 IE=20m A ; IC=0 IC=2A; IB=0.25A IC=4.5A; IB=1.125A IC=2A ; VCE=10V VCE=300V; VBE=-1.5V TC=150 VCE=200V; IB=0 VEB=5V; IC=0 IC=0.4A ; VCE=10V 20 h FE -2 h FE-3 COB f T IC=2A ; VCE=10V IC=4.5A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IC=0.2A ; VCE=10V 2 5 MIN 225 6 SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBE ICEV ICEO IEBO h FE-1 TYP. UNIT V V 2.5 5.0 3.0 4.0 5.0 5.0 5.0 V V V m A m A m...