SavantIC 2N5607
Silicon PNP Power Transistors
DESCRIPTION
●With TO-66 package●Excellent safe operating area
●Low collector saturation voltage
APPLICATIONS
●For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter CollectorDESCRIPTION
2N5605 2N5607 2N5609 2N5611 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5605 VCBO Collector-base voltage 2N5607/5609 2N5611 2N5605 VCEO Collector-emitter voltage 2N5607/5609 2N5611 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -80 -100 -120 -60 -80 -100 -5 -5 25 150 -65~150 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5605 VCEO(SUS) Collector-emitter sustaining volt...