2N5660 Datasheet | SavantIC

DESCRIPTION - With TO-66 package - High breakdown voltage APPLICATIONS - High speed switching and linear amplifier - High-voltage operational amplifiers - Switching regulators ,converters - Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5660 2N5661 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2N5660 Collector-base voltage 2N5661 2N5660 VCEO VEBO IC IB PT Tj Tstg Collector-emitter voltage 2N5661 Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=100 Ta=25 Open collector Open base 300 6 2.0 0.5 20 W 2 200 -65~200 V A A Open emitter 400 200 V CONDITIONS VALUE 250 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT /W Savant IC Semiconductor .. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2N5660 IC=10m A ; IB=0 2N5661 IE=10µA ; IC=0 IC=1A; IB=0.1A IC=2A; IB=0.4A IC=1A ;IB=0.1A IC=2A; IB=0.4A VCE=200V;VBE(off)=1.5V CONDITIONS SYMBOL 2N5660 2N5661 MIN 200 TYP. UNIT V(BR)CEO V 300 6 0.4 0.8 1.2 1.5 V V V V V V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage 2N5660 ICES Collector cut-off current 2N5661 2N5660 VCE=300V;VBE(off)=1.5V VCB=250V; IE=0 0.2 m A ICBO Collector cut-off current 2N5661 2N5660 VCB=400V; IE=0 40 IC=50m A ; VCE=2V 2N5661 2N5660 25 40 IC=0.5A ; VCE=5V 2N5661 25 IC=1A ; VCE=5V IC=2A ; VCE=5V IE=0 ; VCB=10V;f=1MHz 2N5660 VCC=100V;IC=0.5A;IB1=-IB2=15m A 15 5 1.0 m A h FE-1 DC current gain 120 75 h FE-2 DC current gain h FE-3 h FE-4 COB DC current gain DC current gain Output capacitance 45 p F...