2N5660 Overview
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2N5660 IC=10mA ; IB=0.4A IC=1A ;IB=0.1A IC=2A; IB=0.4A VCE=200V;VBE(off)=1.5V CONDITIONS SYMBOL 2N5660 2N5661 MIN 200 TYP.

