2N5737 Overview
Description
With TO-3 package - Low collector saturation voltage APPLICATIONS - For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO PARAMETER 2N5737 Collector-base voltage 2N5738 2N5737 VCEO VEBO IC ICM IB PC Tj Tstg Collector-emitter voltage 2N5738 Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=100 Open collector Open base -100 -5 -10 -20 -4 50 150 -65~200 V A A A W Open emitter -100 -60 V CONDITIONS VALUE -60 V UNIT SYMBOL Rth j-c PARAMETER SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5737 VCEO(SUS) Collector-emitter sustaining voltage 2N5738 VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-5A; IB=-0.5A IC=-10A ;IB=-2.5A IC=-10A ;IB=-2.5A IC=-4A ; VCE=-4V VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=-1.5V TC=150 VEB=-5V; IC=0 IC=-5A ; VCE=-5V IC=-10A ; VCE=-5V IC=-0.5A ; VCE=-10V IC=-0.2A ;IB=0 CONDITIONS 2N5737 2N5738 SYMBOL MIN -60 TYP.
