SavantIC 2N5839
Silicon NPN Power Transistors
DESCRIPTION
●With TO-3 package●Low collector saturation voltage
●High breakdown voltage
APPLICATIONS
●For use in switching power supply and other inductive switching circuits. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbolDESCRIPTION
Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5838 VCBO Collector-base voltage 2N5839 2N5840 2N5838 VCEO Collector-emitter voltage 2N5839 2N5840 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 275 300 375 250 275 350 6 3 100 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5838 VCEO(SUS) Collector-emitter sustaining voltage 2N5839 2N5840 VCEsat VBEsat ICBO ICEV IEBO...