SavantIC 2N5869
Silicon NPN Power Transistor
| Part No. | 2N5869 |
|---|---|
| Datasheet | 2N5869 Download |
| Manufacturer |  SavantIC |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●With TO-3 package●Low collector saturation voltage
APPLICATIONS
●For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbolDESCRIPTION
Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5869 VCBO Collector-base voltage 2N5870 2N5869 VCEO Collector-emitter voltage 2N5870 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 5 5 87.5 150 -65~200 V A W Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5869 2N5870 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5869 IC=0.1A ;IB=0 2N5870 IC=5A;IB=1A IC=5A; IB=1A VCB=ratedVCBO; IB=0 2N5869 ICEO Collector cut-off current 2N5870 IEBO hFE fT Emitter cut-off curren...
