SavantIC 2N5875
Silicon PNP Power Transistor
DESCRIPTION
●With TO-3 package●Low collector saturation voltage
●Complement to type 2N5877 2N5878
APPLICATIONS
●For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter CollectorDESCRIPTION
2N5875 2N5876 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5875 Collector-base voltage 2N5876 2N5875 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5876 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -10 -20 -4 150 200 -65~200 V A A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5875 2N5876 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5875 IC=-0.2A ;IB=0 2N5876 IC=-5A...