2N5973 Datasheet | SavantIC

DESCRIPTION - With TO-3 package - Low collector saturation voltage - High power dissipations APPLICATIONS - Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 100 5 15 30 5 150 150 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT /W Savant IC Semiconductor .. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltge Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=7A ;IB=0.7A IC=15A; IB=3.75A IC=15A; IB=3.75A VCE=30V; IB=0 VCE=120V; VBE(off)=1.5V TC=150 VCB=120V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=1.5V IC=15A ; VCE=4V IC=1A;VCE=10V 25 4 4 MHz MIN 100 1.0 4.0 2.5 1.0 0.5 5.0 0.5 1.0 75 TYP. MAX UNIT V V V V m A m A m A m A SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEO ICEV ICBO IEBO h FE-1 h FE-2 f T Savant IC Semiconductor .. Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm)...